IPD042P03L3G BTS5215LAUMA1 IC Chip Tshiab Electronic Component

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Product Detail

Khoom cim npe

IPD042P03L3 G
P-channel txhim kho hom Field-Effect Transistor (FET), -30 V, D-PAK
Infineon's Opti MOS™ cov tsev neeg muaj tswv yim zoo heev suav nrog p-channel zog MOSFETs.Cov khoom no tsis tu ncua ua tau raws li qhov zoo tshaj plaws thiab kev ua tau zoo xav tau hauv cov ntsiab lus tseem ceeb rau kev tsim hluav taws xob tsim xws li kev tiv thaiv hauv xeev thiab daim duab ntawm cov yam ntxwv zoo.

Summary of Features
Hom kev txhim kho
Qib logic
Avalanche ntsuas
Hloov ceev
Dv/dt rated
Pb-dawb lead-plating
RoHS raws, Halogen-dawb
Tsim nyog raws li AEC Q101
Muaj peev xwm siv tau
Lub Hwj Chim Tswj Kev Ua Haujlwm
Tswj lub cev muaj zog
On-board charger
DC-DC
Cov neeg siv khoom
Logic qib txhais lus
Fais fab MOSFET rooj vag tsav tsheb
Lwm yam kev siv hloov pauv

Specifications

Yam khoom	Tus nqi tsim nyog
Chaw tsim tshuaj paus:	Infineon
Yam khoom:	MOSFET
RoHS:	Paub meej
Technology:	Si
Mounting Style:	SMD / SMT
Pob / Case:	TSO-252-3
Transistor polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Ncua-qhov chaw tawg Voltage:	30 V
Id - Nruam Drain Tam Sim No:	70 A
Rds On - Drain-Source Resistance:	3,5m hmo
Vgs - Rooj vag qhov chaw Voltage:	- 20V, + 20V
Vgs th - Rooj vag-qhov chaw pib Voltage:	2 V
Qg - Gate Charge:	175 nco
Yam tsawg kawg nkaus ua haujlwm kub:	- 55 C ua
Ua haujlwm kub siab tshaj plaws:	+ 175 C
Pd - Fais fab Dissipation:	150 W
Channel hom:	Txhim kho
Lub npe lag luam:	OptiMOS
Ntim:	Rov qab
Ntim:	Txiav daim kab xev
Ntim:	MouseReel
Hom Tshuaj:	Infineon Technologies
Configuration:	Ib leeg
Caij nplooj zeeg:	22 nsq
Forward Transconductance - Min:	65 S
Qhov siab:	2.3mm ib
Ntev:	6.5mm ib
Yam khoom:	MOSFET
Sijhawm sawv:	167 nco
Series:	OptiMOS P3
Factory Pack Quantity:	2500
Cov qeb:	MOSFETs
Hom Transistor:	1 P-Channel
Lub Sijhawm Tig-Off ncua sijhawm:	89 nqi
Lub Sijhawm Tig-On ncua sijhawm:	21 nsq
Dav:	6.22mm 3
Ntu # Aliases:	IPD42P3L3GXT SP000473922 IPD042P03L3GBTMA1
Chav ntsuas hnyav:	0.011640 hli