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Product Detail

Khoom cim npe

Yam khoom

HOM	Kev piav qhia
Qeb	Discrete Semiconductor Khoom Transistors - FETs, MOSFETs - Ib leeg
Mfr	Infineon Technologies
Series	OptiMOS™
Pob	Daim kab xev & Reel (TR) Daim kab xev (CT) Digi-Reel®
Yam khoom	Active
FET Hom	P-Channel
Technology	MOSFET (Hloov Oxide)
Dej mus rau qhov chaw Voltage (Vdss)	30 V
Tam sim no - Nruam Dej (Id) @ 25 ° C	70A (Tc)
Tsav Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6.8mOhm @ 70A, 10V
Vgs(th) (Max) @ Id	2V @ 150 µA
Gate Charge (Qg) (Max) @ Vgs	91 nC @ 10 V
Vgs (Max)	± 20V
Input Capacitance (Ciss) (Max) @ Vds	7720 pF @ 15 V
FET Feature	-
Fais fab tuag (Max)	100W (Tc)
Ua haujlwm kub	-55 ° C ~ 175 ° C (TJ)
Mounting Hom	Nto Mount
Cov Khoom Muag Khoom Pob	PG-TO252-3
Pob / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number	PIB 068

Cov ntaub ntawv & Media

TSEEM CEEB	LINK
Cov ntaub ntawv	IPD068P03L3 G
Lwm cov ntaub ntawv ntsig txog	Nqe Lus Qhia
Khoom Featured	Data Processing Systems
HTML Datasheet	IPD068P03L3 G
EDA Cov Qauv	IPD068P03L3GATMA1 los ntawm Ultra Librarian

Environmental & Export Classifications

TXOJ CAI	Kev piav qhia
RoHS Status	ROHS3 raws
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH xwm txheej	REACH Tsis muaj kev cuam tshuam
ECCN	UA 99
HTSUS	8541.29.0095

Cov peev txheej ntxiv

TXOJ CAI

Kev piav qhia

Lwm Lub Npe

IPD068P03L3GATMA1DKR

IPD068P03L3GATMA1-ND

SIB 001127838

IPD068P03L3GATMA1CT

IPD068P03L3GATMA1TR

Txheem pob

2,500

Transistor

Transistor yog ibkhoom siv semiconductorsiv rauua kom nrovlos yoghloovhluav taws xob teeb liab thiabzog.Lub transistor yog ib qho ntawm cov cuab yeej siv hauv tsev niaj hnubhluav taws xob.[1]Nws yog tsim los ntawmCov khoom siv semiconductor, feem ntau nrog tsawg kawg pebcov terminalsrau kev txuas mus rau ib qho hluav taws xob Circuit Court.Ahluav taws xoblos yogtam sim nosiv rau ib khub ntawm lub transistor lub terminals tswj cov tam sim no los ntawm lwm khub ntawm terminals.Vim tias qhov kev tswj hwm (tso tawm) lub zog tuaj yeem siab dua qhov kev tswj hwm (cov tswv yim) lub zog, lub transistor tuaj yeem ua kom lub teeb liab.Qee cov transistors tau ntim ib tus zuj zus, tab sis muaj ntau yam ntxiv pom nyob rau hauvintegrated circuits.

Austro-Hungarian tus kws kho mob Julius Edgar Lilienfeldproposed lub tswvyim ntawm afield-effect transistorxyoo 1926, tab sis nws tsis tuaj yeem tsim lub cuab yeej ua haujlwm thaum lub sijhawm ntawd.[2]Thawj cov cuab yeej ua haujlwm yuav tsum tau ua yog ibpoint-contact transistortsim nyob rau hauv 1947 los ntawm American physicistsJohn BardeenthiabWalter Brattainthaum ua haujlwm hauv qabWilliam ShockleyntawmBell Labs.Peb tau sib koom xyoo 1956Nobel nqi zog hauv Physicsrau lawv qhov kev ua tiav.[3]Feem ntau siv hom transistor yog covmetal-oxide-semiconductor field-effect transistor(MOSFET), uas tau tsim los ntawmMohamed AtallathiabDawon Kahngntawm Bell Labs xyoo 1959.[4][5][6]Transistors revolutionized lub teb ntawm electronics, thiab paving txoj kev rau me me thiab pheej yig duaxov tooj cua,tshuab xam zauv, thiabkhoos phis tawj, ntawm lwm yam.

Feem ntau cov transistors yog tsim los ntawm cov ntshiab heevsilicon, thiab ib co ntawmgermanium, tab sis qee yam lwm yam khoom siv semiconductor qee zaum siv.Lub transistor yuav tsuas muaj ib hom kev thauj khoom xwb, nyob rau hauv ib qho kev cuam tshuam los ntawm transistor, lossis tej zaum yuav muaj ob hom kev thauj khoom hauvbipolar hlws ris transistorkhoom siv.Piv nrog raulub tshuab nqus tsev, transistors feem ntau me dua thiab xav tau lub zog tsawg dua los ua haujlwm.Qee lub tshuab nqus tsev vacuum muaj qhov zoo dua cov transistors ntawm kev ua haujlwm siab heev lossis kev ua haujlwm siab.Ntau hom transistors yog tsim los rau cov qauv specifications los ntawm ntau manufacturers.

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Sau koj cov lus ntawm no thiab xa tuaj rau peb